25 keV Proton intearaction in 20 nm LiF foil

I am trying to simulate effect of 20 keV proton in 20 nm LiF film but I find just “Transportation” process.
Can any one help me, how can I rightly check this effect.

generally, experimentally when such proton interact with this kind of foil there used to liberation of secondary electron.
I know this effect are specially created for Si material in geant4 in microelectronic example but can anyone hint me, how one can extent this for LiF or CsI such kind of alkali material.

What physics list are you using? You will almost certainly need to use biasing to enhance the process(es) that are relevant, because 20 nm is extremely small compared to most MFPs.

I tried with two method

  1. Using modular PhysicsList as follow
    G4VModularPhysicsList* physicsList = new FTFP_BERT;
    //physicsList->ReplacePhysics(new G4EmStandardPhysics_option4());
    physicsList->RegisterPhysics( new G4EmPenelopePhysics() );
    physicsList->RegisterPhysics(new G4DecayPhysics());
    physicsList->RegisterPhysics(new G4RadioactiveDecayPhysics());
    physicsList->RegisterPhysics(new G4StepLimiterPhysics());
    G4OpticalPhysics* opticalPhysics = new G4OpticalPhysics();
    opticalPhysics->SetTrackSecondariesFirst(kScintillation, true);

  2. Modular Physics List was replace by constructed physics List as it is used in “microelectronics” example but later realize that this particular physics was developed on for Si and extended few more elements but not for LiF or CsI.

Do you have any idea?