Hello, I am trying to simulate charge (electron hole) generation inside a silicon box. I know that electric field can have impact on electrons and holes recombining thereby affecting charge generation. Is this phenomenon included in geant4 program when I apply electric field inside?
I am not sure if Geant4 takes charge drift and diffusion into account. However you can look into AllPix squared that does takes these effects into account.
The Geant4 toolkit does not include solid state effects like electron/hole pairs, lattices, dispersion relations, etc. G4 treats all materials as amorphous continua with spatially uniform properties.
In particular the G4 ionization processes (which is where you might imagine e/h production to occur, tend to have a lower validity range in the tens of eV, well above the semiconductor bandgaps.
I maintain, and continue to develop, an add-on library called “G4CMP” (https://github.com/kelseymh/G4CMP.git) which is a preliminary attempt to support these sorts of things. It has some known limitations and missing features, but might possibly be useful for your case.
I have a problem defining an amorphous selenium (a-Se) in the Geant4 program
Hope you help me
I searched a lot a lot in Google and I did not find her definition???, please help me
Thank you for help me