I wanted to calculated “DDD values for semiconductor Indium Phosphide (InP) in low-Earth orbit (altitude of 400 km) using the GCR and TP fluxes as source terms and also in deep space using the GCR fluxes. The solar modulation potential (the so-called W-index) was set to zero to reproduce the solar minimum condition. The main radiation source in low Earth orbit is TP protons. The GCR flux includes almost all the charged particles found in space, including protons and He, Li, Be, B, C, N, O, F, Ne, Na, Mg, Al, Si, P, Cl, Ar, K, Ca, Sc, Ti, V, Cr, Mn, Fe, Co and Ni ions. Note that trapped electrons were not considered as a component of space radiation in this work because the electron NIEL value is smaller than that of protons. The energy of proton is 100 MeV.” So my question is that which example is best for my requirement to calculate Displacement Damage Dose of InP, and other thing which changes do in that example.
Hello,
Geant4 provide simulation of energy loss, NIEL may be also sampled, but to get displacement you will need to prepare your own code for Geant4 stepping action or sensitive detector. You may start from some simple example - TestEm7, TestEm8 or Hadr01 but some development from your side will be needed.
VI