Straggling effect and shell corrections in Silicon

Physics Processes, Models and Cross Sections
1

Hi,

I am trying to simulate a Silicon detector response to ions (H to Fe). I use Geant to simulate the energy deposition of particles and then provide this deposition to an external software which computes the pulse signal output of the detector.
Recently I have been looking at the effects of :

_ Straggling in energy deposition (https://desktop-publishing.web.cern.ch/desktop-publishing/crnrepex.pdf , https://iopscience.iop.org/article/10.1088/1748-0221/6/06/P06013/pdf)

_ Shell-correction (https://arxiv.org/pdf/1711.05465.pdf)

I would like to understand how those effects are taken into account in Geant for ions.

Thanks in advance for the help you can provide me!

2

You may want to look at TestEm7, which includes screened processes for the case of heavy ions in materials.

3

Thanks I will dig into these codes!