Straggling effect and shell corrections in Silicon


I am trying to simulate a Silicon detector response to ions (H to Fe). I use Geant to simulate the energy deposition of particles and then provide this deposition to an external software which computes the pulse signal output of the detector.
Recently I have been looking at the effects of :

_ Straggling in energy deposition ( ,

_ Shell-correction (

I would like to understand how those effects are taken into account in Geant for ions.

Thanks in advance for the help you can provide me!

You may want to look at TestEm7, which includes screened processes for the case of heavy ions in materials.

Thanks I will dig into these codes!